PMDPB65UP,115 parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ FET, MOSFET/ PMDPB65UP,115

The pictures are for reference only

Brand:

NXP

Model:

PMDPB65UP,115

Description:

MOSFET 2P-CH 20V 3.5A SOT1118

Stock:

4566

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.03

The market price fluctuates. Please consult the customer service for the actual price

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

3.5A

Drain source voltage (Vdss)

20V

FET Type

2 P Channel(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

6nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

380pF @ 10V

On resistance (maximum) for different Ids and Vgs

70 mΩ @ 1A,4.5V

Power - maximum

520mW

Vgs (th) (maximum) for different Ids

1V @ 250µA

packing

TR,CT,bulk

series

working temperature

150°C(TJ)

Encapsulation/Housing

6-UDFN Exposed Pad

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

PMDPB65UP,115（FET, MOSFET）ByNXPDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4566,Price reference "real-time change" China/Hongkong。 PMDPB65UP,115 package/specs, Download PMDPB65UP,115、Datasheet。